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Semiconductors
Nanoindentation
Raman-AFM of MEMs Device
Stressed Silicon
Raman Imaging of Germanium Quantum Dots
MultiProbe NanoIndentation & AFM Profiling with On-line Raman
AFM with On-Line Raman of Strained Silicon
AFM, NSOM and Capacitance
NanoIndentation and Raman Characterization
Online AFM/Raman of an Si/SiO2 Grid
AFM/Raman of Si/SiO2 Grid
Nanoindentation on Silicon
FIB Etched Trench
Thermal imaging of SRAM
TFT in Liquid Crystal Display
Silicon Semiconductor
Thermal Imaging of V Grooved Quantum Laser
Electrical Imaging of SRAM
Topography of SRAM
Reflection NSOM of SRAM
Topography of SRAM




Resistance Imaging of PN Junction

The AFM image of a pn junction shows no features because of its flat topography The NSOM image obtained in reflection mode reveals the sequence of active areas The Resistivity image of the same region clearly shows the two biased junctions

This example demonstrates the use of the electrical features of the Nanonics glass probe based SPM sensors. The surface is flat and thus, there are no surface features that could indicate via the AFM topography where the pn junction is located but the resistivity image shows the resistance in two of the connected pn junctions. This data can be analyzed to give the carrier concentration.

Only Nanonics can produce simultaneous Near-field optical and Electrical imaging

These Images were produced using the The MultiView 1000™
Electrical Probe with a conductive gold coating The MultiView 1000 head

The Nanonics MultiView 1000™ is designed around  the 3D Flatscan™ which has a completely free optical axis from above and below the sample. Nanonics uses NSOM cantilevered optical fiber probes  which do not block the microscope objective. The metal coating of these probes allows them to be used for electrical measurementes while the aperture at their tips illuminates the sample in the near field.


 



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