NanoIndentation Can Be Correlated with Chemical Properties

It is now possible to investigate a nanoindentation, measure its topography and correlate on-line the spectral intensity alterations of, for example, silicon strain with topographical position in a nanoindentation.

The intensity of the Raman band of silicon as a function of height can be compared because of the on-line correlation.

Only the Nanonics & Renishaw fully integrated hardware and software solution provides for such new worlds of fully integrated spectral imaging and nanoindentation.