Nanonics' MultiView systems are able to image in all (transmission,reflection, collection, illumination & illumination-collection) near field (NSOM) modes. These systems are ideal for the imaging of a variety of microelectronic device structures.

Here below are shown some examples of device structure imaging, including optoelectronics devices and SRAM (static random access memory) structures.

AFM image of SRAM	NSOM image of SRAM

In the above images the AFM (left) the topography of an SRAM. The same tip is used simultaneously to obtain the NSOM image. These results were obtained using a cantilevered NSOM probe with an 150 nm aperture in reflection mode. Imaging (AFM and NSOM) of two different areas of the sample was done and the results are shown below.

AFM image of SRAM	Corresponding NSOM image

AFM image of SRAM	Corresponding NSOM image

These results show differences between some of the features obtained in NSOM and those obtained via AFM. The AFM was imaging the surface relief whereas the NSOM is able to penetrate the silicon layer below. In order to better resolve the relief of the sample, topographic imaging with a super thin AFM probe (with a radius of curvature of 10nm) was performed. This is shown in the images below as is a line scan obtained.

AFM image with10nm thin probe