Super User

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Monday, 04 March 2013 12:09


Thin Film Transistor in Liquid Crystal Display

50 x 50 micron AFM Topgraphy   Simultaneously produced NSOM image

These images was produced using the MultiView 1000™ Microscope.

For more details, see the application note on TFT Displays Click here to download (489kB)

Tuesday, 05 March 2013 12:26

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Tuesday, 05 March 2013 12:25

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Monday, 04 March 2013 08:21

Solar Cells Graphene

Graphene Transistor

Near-field optics: from subwavelength illumination to nanometric shadowing

Near-field optics uniquely addresses problems of x, y and z resolution by spatially confining the effect of a light source to nanometric domains. The problems in using far-field optics (conventional optical imaging through a lens) to achieve nanometric spatial resolution are formidable. Near-field optics serves a bridging role in biology between optical imaging and scanned probe microscopy. The integration of near-field and scanned probe imaging with far-field optics thus holds promise for solving the so-called inverse problem of optical imaging.

Graphene Transistor


A unique protocol of near-field excitation for generating photocurrent with strong impact in solar cell applications is demonstrated here. A near-field scanning optical microscope has been used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photoresponse, it is shown that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts.

The left picture shows the SEM image of a graphene transistor and the electrical setup for PC measurements. On the right seven PC images taken at gate biases between -60 and +100 V are shown. The dashed lines indicate the edges of the source and drain electrodes. The two scale bars on the bottom of the very right image are both 1 nm long.


Schematic illustration of the experimental setup and sample structure.


Mueller et al. PHYSICAL REVIEW B 79, 245430 2009

Thursday, 28 February 2013 12:52

SRAM electrical image

SRAM electrical image

SRAM after Chemical Mechanical Polishing

12x12 micron AFM image: No structure is visible as CMP leaves the topography very flat   Reflection NSOM of the same region: 
NSOM is able to reveal clear structures due to differences in the refractive index
All these images were produced using the The MultiView 1000™
Thursday, 28 February 2013 12:47

Stressed Silicon image

Raman Spectrum Obtained on the Strained Silicon Layer

Using Three Point Measurements




Far-field & Difference Spectrum Comparison

at the Stressed Silicon Frequency


A comparison between the far field image at the stressed silicon frequency (top image) and an image formed at the stressed silicon frequency of the difference spectrum (bottom image). The difference spectrum is shown.
















Thursday, 28 February 2013 12:45

Silicon Semiconductor image


Only Nanonics combined Raman and AFM system allows Raman spectra to be taken while an AFM tip is in contact with the sample.

9 x 7 micron AFM image   Raman intesityof the same region at 520nm/cm obtained  simultaneously

For this measurement the cantilevered glass AFM probe  was brought into contact with the sample using the MultiView 400™ SPM system.

The Nanonics MultiView 400™ system can be directly integrated into the Renishaw RM Series Raman Microscope. These microscopes employ the upright microscope configuration, and the Nanonics MultiView 400™ has a free optical axis which allows it to be readily placed on the sample stage of such a microscope (see picture). 

The Nanonics patented cantilevered optical fibers are held between the microscope lens and the sample without obstructing any aspect of the far-field optics. The tip in these fibers is exposed and is illuminated by the lens of the microscope, allowing the user to view the exact region where the SPM and Raman information is being collected.
The MultiView 400™ Integrated with a standard Raman Microscope

Only Nanonics combined Raman and AFM system allows Raman spectra to be taken while an AFM tip is in contact with the sample.


Thursday, 28 February 2013 12:41

Imaging of PN Junction

hello Hesham
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The AFM image of a pn junction shows no features because of its flat topography   The NSOM image obtained in reflection mode reveals the sequence of active areas   The Resistivity image of the same region clearly shows the two biased junctions

This example demonstrates the use of the electrical features of the Nanonics glass probe based SPM sensors. The surface is flat and thus, there are no surface features that could indicate via the AFM topography where the pn junction is located but the resistivity image shows the resistance in two of the connected pn junctions. This data can be analyzed to give the carrier concentration. 

Only Nanonics can produce simultaneous Near-field optical and Electrical imaging

These Images were produced using the The MultiView 1000™
Electrical Probe with a conductive gold coating   The MultiView 1000 head

The Nanonics MultiView 1000™ is designed around  the 3D Flatscan™ which has a completely free optical axis from above and below the sample. Nanonics uses NSOM cantilevered optical fiber probes  which do not block the microscope objective. The metal coating of these probes allows them to be used for electrical measurementes while the aperture at their tips illuminates the sample in the near field.



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