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Quantum Laser Thermal Image


V Grooved Quantum Wire Laser

4x4 micron Collection NSOM image taken during operation   Thermal Image of the same region

The collection mode NSOM image clearly reveals the V-shaped evanescent field on either side of the Quantum Well Laser. Note that areas with high light intensity are not identical with areas of high thermal intensity. This information can only be uncovered by simultaneous imaging.

These Images were produced using the The MultiView 1000™ and Nanonics Thermal Probes.

Only Nanonics Thermal Probes have a thermal response time under 20us thermal resolution under 10 millidegrees and nanometric spacial resolution. 

In the Dual Wire Thermoresistive probe, two platinum wires are stretched through the nanopipette and fused together at their tips. This fused junction has a resistance that is temperature-dependent. This unique tip allows simultaneous measurement of surface topography with thermal conductivity or temperature.      
SEM of Dual-Wire thermoresistive probe showing fused junction 


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Thin Film Transistor in Liquid Crystal Display

50 x 50 micron AFM Topgraphy   Simultaneously produced NSOM image

These images was produced using the MultiView 1000™ Microscope.

For more details, see the application note on TFT Displays Click here to download (489kB)

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Solar Cells Graphene

Graphene Transistor

Near-field optics: from subwavelength illumination to nanometric shadowing

Near-field optics uniquely addresses problems of x, y and z resolution by spatially confining the effect of a light source to nanometric domains. The problems in using far-field optics (conventional optical imaging through a lens) to achieve nanometric spatial resolution are formidable. Near-field optics serves a bridging role in biology between optical imaging and scanned probe microscopy. The integration of near-field and scanned probe imaging with far-field optics thus holds promise for solving the so-called inverse problem of optical imaging.

Graphene Transistor


A unique protocol of near-field excitation for generating photocurrent with strong impact in solar cell applications is demonstrated here. A near-field scanning optical microscope has been used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photoresponse, it is shown that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts.

The left picture shows the SEM image of a graphene transistor and the electrical setup for PC measurements. On the right seven PC images taken at gate biases between -60 and +100 V are shown. The dashed lines indicate the edges of the source and drain electrodes. The two scale bars on the bottom of the very right image are both 1 nm long.


Schematic illustration of the experimental setup and sample structure.


Mueller et al. PHYSICAL REVIEW B 79, 245430 2009

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SRAM electrical image

SRAM electrical image

SRAM after Chemical Mechanical Polishing

12x12 micron AFM image: No structure is visible as CMP leaves the topography very flat   Reflection NSOM of the same region: 
NSOM is able to reveal clear structures due to differences in the refractive index
All these images were produced using the The MultiView 1000™
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Stressed Silicon image

Raman Spectrum Obtained on the Strained Silicon Layer

Using Three Point Measurements




Far-field & Difference Spectrum Comparison

at the Stressed Silicon Frequency


A comparison between the far field image at the stressed silicon frequency (top image) and an image formed at the stressed silicon frequency of the difference spectrum (bottom image). The difference spectrum is shown.
















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Silicon Semiconductor image


Only Nanonics combined Raman and AFM system allows Raman spectra to be taken while an AFM tip is in contact with the sample.

9 x 7 micron AFM image   Raman intesityof the same region at 520nm/cm obtained  simultaneously

For this measurement the cantilevered glass AFM probe  was brought into contact with the sample using the MultiView 400™ SPM system.

The Nanonics MultiView 400™ system can be directly integrated into the Renishaw RM Series Raman Microscope. These microscopes employ the upright microscope configuration, and the Nanonics MultiView 400™ has a free optical axis which allows it to be readily placed on the sample stage of such a microscope (see picture). 

The Nanonics patented cantilevered optical fibers are held between the microscope lens and the sample without obstructing any aspect of the far-field optics. The tip in these fibers is exposed and is illuminated by the lens of the microscope, allowing the user to view the exact region where the SPM and Raman information is being collected.
The MultiView 400™ Integrated with a standard Raman Microscope

Only Nanonics combined Raman and AFM system allows Raman spectra to be taken while an AFM tip is in contact with the sample.


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