SRAM AFM, Thermal and Resistance Imaging
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V Grooved Quantum Wire Laser
The collection mode NSOM image clearly reveals the V-shaped evanescent field on either side of the Quantum Well Laser. Note that areas with high light intensity are not identical with areas of high thermal intensity. This information can only be uncovered by simultaneous imaging. These Images were produced using the The MultiView 1000™ and Nanonics Thermal Probes. Only Nanonics Thermal Probes have a thermal response time under 20us thermal resolution under 10 millidegrees and nanometric spacial resolution.
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Thin Film Transistor in Liquid Crystal Display
50 x 50 micron AFM Topgraphy | Simultaneously produced NSOM image | |
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Continue to learn more about how Nanonics Imaging can advance your research:
Near-field optics: from subwavelength illumination to nanometric shadowing
Near-field optics uniquely addresses problems of x, y and z resolution by spatially confining the effect of a light source to nanometric domains. The problems in using far-field optics (conventional optical imaging through a lens) to achieve nanometric spatial resolution are formidable. Near-field optics serves a bridging role in biology between optical imaging and scanned probe microscopy. The integration of near-field and scanned probe imaging with far-field optics thus holds promise for solving the so-called inverse problem of optical imaging.
A unique protocol of near-field excitation for generating photocurrent with strong impact in solar cell applications is demonstrated here. A near-field scanning optical microscope has been used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photoresponse, it is shown that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts.
The left picture shows the SEM image of a graphene transistor and the electrical setup for PC measurements. On the right seven PC images taken at gate biases between -60 and +100 V are shown. The dashed lines indicate the edges of the source and drain electrodes. The two scale bars on the bottom of the very right image are both 1 nm long.
Schematic illustration of the experimental setup and sample structure. |
Mueller et al. PHYSICAL REVIEW B 79, 245430 2009 |
SRAM electrical image | ||||||||||||
SRAM after Chemical Mechanical Polishing
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Raman Spectrum Obtained on the Strained Silicon Layer
Using Three Point Measurements
Far-field & Difference Spectrum Comparison
at the Stressed Silicon Frequency
A comparison between the far field image at the stressed silicon frequency (top image) and an image formed at the stressed silicon frequency of the difference spectrum (bottom image). The difference spectrum is shown.
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