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Gold NanoParticle Lines Printed on a Microchip
Figure 1: SEM and AFM gold nanoparticles line printed on semiconductor surface. (a) SEM image shows the gold nanoparticles line printed by FPN. Scale bar is 5 microns. (b) AFM image of smaller area than in (a) shows the same printed line as in (a). (Taha, H. et al. Controlled Deposition of Gold Nanowires on Semiconducting and Nonconducting Surfaces Nano Letters Vol. 7, No. 7: 1883-1887)
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Elemental Anaylsis of a Gold Line Written with the NanoFountain PenTM
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Figure 2: Gold nanoparticles line printed on semiconductor surface by FPN technique in close juxtaposition to a gold line produced by electron beam lithography technique. (a) AFM image shows the lines produced by electron beam lithography and the gold colloid line deposited by FPN on the right side of the image. Scale bar is 1.2 cm, (b) Zoom-in image of the marked area on (a) highlights the deposited line. Scale bar is 360 nm.(c) Height profile line between the marked arrows on (a) shows one of the electron beam lithography lines with width of 250 nm and height of 45 nm and the FPN deposited line 6 with width of 100 nm and height of 15 nm. (d) Electron-induced x-ray fluorescence spectrum of the FPN deposited line shows Au on the right peak. (Taha, H. et al. Controlled Deposition of Gold Nanowires on Semiconducting and Nonconducting Surfaces Nano Letters Vol. 7, No. 7: 1883-1887)
Comparison of Line Profiles of a Gold Line Written with The NanoFountain PenTM and a Gold Line Produced by Electron Beam Lithography
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Elemental and I-V Characteristics of a Gold Line Written with The NanoFountain PenTM
| EDS Measurement of the gold line |
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I-V Characterization of the gold line:
The line slope shows Ohmic behavior with resistance of ~ 650 ohms.
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I-V Characteristics of a Gold Line Written with The NanoFountain PenTM
FPN Gold colloids line deposited in the interconnection of a 100 nm separation of two conducting wires for current-voltage characterization (a) Optical image shows the inner electrodes pattern for the I-V characterization (x100 magnification). (b) Optical image of the inner electrodes area (x1000 magnification). (c) AFM image shows the inner electrodes pattern with a printed gold nanoparticles wire crossing a space of 100 nm between two electrodes. (Scale bar is 800 nm.) (d) Height line profile of the dashed line on (c) shows the gold nanoparticles 120 nm line on top of one electrode. (e) I-V characterization of the printed line shows an Ohmic behavior with resistance of ~4000 Ohm (y-axis in units of microamps). (Taha, H. et al. Controlled Deposition of Gold Nanowires on Semiconducting and Nonconducting Surfaces Nano Letters Vol. 7, No. 7: 1883-1887)
WSxM software has been used for image processing of the pictures above: I. Horcas et al. Rev. Sci. Instrum. 78, 013705 (2007).
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